HE (High-function Economy) Type [1-Channel (Form A) Type]

FEATURES 1. Highly sensitive and low on-resistance 2. Controls various types of loads such as relays, motors, lamps and solenoids. 3. Optical coupling for extremely high isolation 5,000 Vrms I/O isolation available. 4. Low-level off state leakage current 5. Eliminates the need for a p

Both low on-resistance and good cost-performance achieved. Measuring instruments

FEATURES 1. Wide variation of 40V, 60V, 100V, 200V, 250V, 400V, 600V, 1,000V and 1,500V load voltage 2. Low on-resistance of typ. 0.6Ω (AQV251) 3. Reinforced insulation type of 5,000V I/O isolation available TYPICAL APPLICATIONS • Measuring instruments • Data communication equipment • Telep

封装/外壳：6-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY DPST-NO 200MA 0-250V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY DPST-NO 200MA 0-250V 继电器 固态继电器

PhotoMOS HE 1a (6脚型)

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)