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APT8020价格
参考价格：￥237.0761
型号：APT8020B2LLG 品牌：Microsemi 备注：这里有APT8020多少钱，2025年最近7天走势，今日出价，今日竞价，APT8020批发/采购报价，APT8020行情走势销售排行榜，APT8020报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | Microsemi 美高森美 |   | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | Microsemi 美高森美 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a | ADPOW | | ||
N-Channel MOSFET DESCRIPTION · Drain Current -ID= 33A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · PFC Circuits · Power Supplies | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | Microsemi 美高森美 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
FREDFETs | Microchip 微芯科技 | | ||
POWER MOS 7 800V 38A 0.200 Ohm | APT 晶科电子 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：160.4 Kbytes Page：5 Pages | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：160.4 Kbytes Page：5 Pages | ADPOW | | ||
MOSFET | Microchip 微芯科技 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：69.79 Kbytes Page：2 Pages | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：162.87 Kbytes Page：5 Pages | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：160.4 Kbytes Page：5 Pages | ADPOW | | ||
Snap-acting Momentary Pushbutton Switches Features/Benefits • Positive tactile feel • Multi-positions available • Wide variety of termination options • Epoxy terminal seal compatible with bottom wash cleaning • RoHS compliant models available Typical Applications • Instrumentation • Computer peripherals • Telecommunications equ | CK-COMPONENTS 力特 | | ||
T1/E1 Extended Temperature Range SMD Single Transformers 文件：149.46 Kbytes Page：1 Pages | FILTRAN 费尔兰特 | | ||
Navigation Controller Unit (NCU) 文件：160.15 Kbytes Page：2 Pages | SONARDYNE | | ||
Snap-acting Momentary Pushbutton Switches 文件：1.20631 Mbytes Page：17 Pages | CK-COMPONENTS 力特 | | ||
Radial Lead Thermal Cutoff 文件：57.59 Kbytes Page：1 Pages | NTE | |
APT8020产品属性
- 类型
描述
- 型号
APT8020
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microsemi Corporation |
22+ |
SOT2274 miniBLOC |
9000 |
原厂渠道,现货配单 |
|||
Microsemi(美高森美) |
24+ |
N/A |
8548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
|||
MICROSEMI/美高森美 |
23+ |
12889 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
APT |
24+ |
8866 |
|||||
MICROCHIP(美国微芯) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
2023+ |
MODULE |
172 |
主打螺丝模块系列 |
|||
APTMICR |
18+ |
TO-264L |
85600 |
保证进口原装可开17%增值税发票 |
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