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APT8020B2LLG价格
参考价格：￥237.0761
型号：APT8020B2LLG 品牌：Microsemi 备注：这里有APT8020B2LLG多少钱，2025年最近7天走势，今日出价，今日竞价，APT8020B2LLG批发/采购报价，APT8020B2LLG行情走势销售排行榜，APT8020B2LLG报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT8020B2LLG | MOSFET | Microchip 微芯科技 |   | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | Microsemi 美高森美 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co | ISC 无锡固电 | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：160.4 Kbytes Page：5 Pages | ADPOW | |
APT8020B2LLG产品属性
- 类型
描述
- 型号
APT8020B2LLG
- 功能描述
MOSFET N-CH 800V 38A T-MAX
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS 7®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
MICROSEMI |
638 |
原装正品 |
|||||
APT |
24+ |
8866 |
|||||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
2023+ |
MODULE |
172 |
主打螺丝模块系列 |
|||
Microsemi Corporation |
23+ |
TO2473 Variant |
9000 |
原装正品，支持实单 |
|||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
Microsemi |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
APTMICROSEMI |
23+ |
T-MAX |
30000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
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