APT6013LLLG价格

参考价格:¥101.7611

型号:APT6013LLLG 品牌:Microsemi 备注:这里有APT6013LLLG多少钱,2026年最近7天走势,今日出价,今日竞价,APT6013LLLG批发/采购报价,APT6013LLLG行情走势销售排行榜,APT6013LLLG报价。
型号 功能描述 生产厂家 企业 LOGO 操作
APT6013LLLG

N-Channel MOSFET

MICROCHIP

微芯科技

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

ADPOW

Silicon Industrial Rectifier 20 Amp

Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add

NTE

APT6013LLLG产品属性

  • 类型

    描述

  • 型号

    APT6013LLLG

  • 功能描述

    MOSFET N-CH 600V 43A TO-264

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    POWER MOS 7®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-15 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
2026+
TO-264
60
原装正品,欢迎来电咨询!
APT
25+
4
公司优势库存 热卖中!!
APT
22+
SOT227
8000
原装正品支持实单
APT
24+
8866
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
APT
23+
模块
5000
原装正品,假一罚十
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
APT
24+
模块
3500
原装现货,可开13%税票
APT
24+
模块
6430
原装现货/欢迎来电咨询
ISC/固电
23+
TO-3PN
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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