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APT5014价格
参考价格:¥63.6163
型号:APT5014BLLG 品牌:Microsemi 备注:这里有APT5014多少钱,2025年最近7天走势,今日出价,今日竞价,APT5014批发/采购报价,APT5014行情走势销售排行榜,APT5014报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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APT5014 | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | ||
APT5014 | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w | ADPOW | ||
APT5014 | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件:71.52 Kbytes Page:2 Pages | ADPOW | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | |||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-2 | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switc | ADPOW | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w | ADPOW | |||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | Microsemi 美高森美 | |||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | |||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-2 | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | |||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching | ISC 无锡固电 | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件:71.52 Kbytes Page:2 Pages | ADPOW | |||
POWER MOS 7 FREDFET 文件:166.74 Kbytes Page:5 Pages | ADPOW | |||
isc N-Channel MOSFET Transistor 文件:419.24 Kbytes Page:2 Pages | ISC 无锡固电 | |||
POWER MOS 7 FREDFET 文件:166.74 Kbytes Page:5 Pages | ADPOW | |||
POWER MOS 7 MOSFET 文件:166.05 Kbytes Page:5 Pages | ADPOW | |||
isc N-Channel MOSFET Transistor 文件:419.24 Kbytes Page:2 Pages | ISC 无锡固电 | |||
POWER MOS 7 MOSFET 文件:166.05 Kbytes Page:5 Pages | ADPOW | |||
POWER MOS 7 FREDFET 文件:166.74 Kbytes Page:5 Pages | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件:71.52 Kbytes Page:2 Pages | ADPOW | |||
POWER MOS 7 MOSFET 文件:166.05 Kbytes Page:5 Pages | ADPOW | |||
THM TEST POINTS (THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
(THM) THRU HOLE MOUNT TEST POINTS - COLOR KEYED • Color keyed for visibility and quick identification • Economical choice for PC test point terminations • Snap-fit mounting provides positive retention for wave soldering • Wire form loop for safe, non-slip testing • Space saving, ultra low and low profile designs • High profile design for d | MOLEX11 莫仕 | |||
LM60440AQEVM Users Guide 文件:1.33553 Mbytes Page:14 Pages | TI 德州仪器 | |||
DIP Clips for 8-14-16-20-24-40 Pin Clips And 8 Through 40 Pin DIP Removers 文件:38.33 Kbytes Page:2 Pages | 3M | |||
Pin Clips 文件:139.13 Kbytes Page:1 Pages | POMONA Pomona Electronics |
APT5014产品属性
- 类型
描述
- 型号
APT5014
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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APT |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
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APT |
25+ |
TO264 |
1414 |
原装正品,欢迎来电咨询! |
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APT |
24+ |
CAN |
500000 |
行业低价,代理渠道 |
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APT |
24+/25+ |
20 |
原装正品现货库存价优 |
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APT/晶科电子 |
24+ |
TO-3P |
880000 |
明嘉莱只做原装正品现货 |
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APT |
04+ |
TO-247 |
270 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APTMICROSEMI |
1822+ |
TO-264L |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
APT |
23+ |
TO-247 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
APT5014芯片相关品牌
APT5014规格书下载地址
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APT5014数据表相关新闻
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2019-3-5
DdatasheetPDF页码索引
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