APT5014价格

参考价格:¥63.6163

型号:APT5014BLLG 品牌:Microsemi 备注:这里有APT5014多少钱,2025年最近7天走势,今日出价,今日竞价,APT5014批发/采购报价,APT5014行情走势销售排行榜,APT5014报价。
型号 功能描述 生产厂家&企业 LOGO 操作
APT5014

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

APT5014

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w

ADPOW

APT5014

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:71.52 Kbytes Page:2 Pages

ADPOW

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-2

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switc

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w

ADPOW

Power Semiconductors Power Modules RF Power MOSFETs

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Microsemi

美高森美

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

ADPOW

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-2

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:71.52 Kbytes Page:2 Pages

ADPOW

POWER MOS 7 FREDFET

文件:166.74 Kbytes Page:5 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件:419.24 Kbytes Page:2 Pages

ISC

无锡固电

POWER MOS 7 FREDFET

文件:166.74 Kbytes Page:5 Pages

ADPOW

POWER MOS 7 MOSFET

文件:166.05 Kbytes Page:5 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件:419.24 Kbytes Page:2 Pages

ISC

无锡固电

POWER MOS 7 MOSFET

文件:166.05 Kbytes Page:5 Pages

ADPOW

POWER MOS 7 FREDFET

文件:166.74 Kbytes Page:5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件:71.52 Kbytes Page:2 Pages

ADPOW

POWER MOS 7 MOSFET

文件:166.05 Kbytes Page:5 Pages

ADPOW

THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

(THM) THRU HOLE MOUNT TEST POINTS - COLOR KEYED

• Color keyed for visibility and quick identification • Economical choice for PC test point terminations • Snap-fit mounting provides positive retention for wave soldering • Wire form loop for safe, non-slip testing • Space saving, ultra low and low profile designs • High profile design for d

MOLEX11

莫仕

LM60440AQEVM Users Guide

文件:1.33553 Mbytes Page:14 Pages

TI

德州仪器

DIP Clips for 8-14-16-20-24-40 Pin Clips And 8 Through 40 Pin DIP Removers

文件:38.33 Kbytes Page:2 Pages

3M

Pin Clips

文件:139.13 Kbytes Page:1 Pages

POMONA

Pomona Electronics

APT5014产品属性

  • 类型

    描述

  • 型号

    APT5014

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

更新时间:2025-8-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
24+
NA/
3300
原装现货,当天可交货,原型号开票
APT
25+
TO264
1414
原装正品,欢迎来电咨询!
APT
24+
CAN
500000
行业低价,代理渠道
APT
24+/25+
20
原装正品现货库存价优
APT/晶科电子
24+
TO-3P
880000
明嘉莱只做原装正品现货
APT
04+
TO-247
270
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
APTMICROSEMI
1822+
TO-264L
9852
只做原装正品假一赔十为客户做到零风险!!
APT
23+
TO-247
8650
受权代理!全新原装现货特价热卖!
ADPOW
23+
原厂原包
19960
只做进口原装 终端工厂免费送样

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