Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-2

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w

Power Semiconductors Power Modules RF Power MOSFETs

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-2

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along w

POWER MOS V FREDFET

POWER MOS V 500V 37A 0.140 Ohm

POWER MOS 7 FREDFET

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isc N-Channel MOSFET Transistor

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：71.52 Kbytes Page：2 Pages

POWER MOS 7 FREDFET

文件：166.74 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

文件：419.24 Kbytes Page：2 Pages

POWER MOS 7 MOSFET

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POWER MOS 7 MOSFET

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POWER MOS 7 FREDFET

文件：166.74 Kbytes Page：5 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：71.52 Kbytes Page：2 Pages

POWER MOS 7 MOSFET

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Dot Matrix LED

■ General Description Sharps dot matrix LEDs can express characters and symbols on a display. (Number of dots: 5✕7, 8✕8, 16✕16). We can supply wide color variation; high-luminosity red T series, yellow-green E series, sunset orange S series, dichromatic emission, etc.

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package

Zener Diode, 300mW 짹5 Tolerance

Features: Zener Voltage 3.3V to 24V SOT–23 Type Surface Mount Package Absolute Maximum Ratings: Maximim Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Maximim Repetitive Peak Working Current, IZRM . . . . . . . . . .. . . . . . . .