位置：首页 > IC中文资料第9744页 > APT4020
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT4020 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW |   | |
APT4020 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | APT 晶科电子 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 22.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS=400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching | ISC 无锡固电 | | ||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES Drain Current : ID= 23A@ TC=25℃ Drain Source Voltage : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V 100 avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC conv | ISC 无锡固电 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | | ||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：419.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V FREDFET | APT 晶科电子 | | ||
FREDFET | Microchip 微芯科技 | | ||
HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE
| SEMTECH 先之科 | | ||
10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection. | POWERBOX | | ||
Adafruit NeoTrellis M4 with Enclosure and Buttons Kit Pack 文件：1.95471 Mbytes Page：4 Pages | Adafruit | | ||
EPDM Snap-In Liquid Tight Bushings 文件：95.85 Kbytes Page：1 Pages | Heyco | | ||
DC Response, Silicon MEMS 文件：156 Kbytes Page：3 Pages | TEC 泰科电子 | |
APT4020产品属性
- 类型
描述
- 型号
APT4020
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
POWER MOS V FREDFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO-3P |
3000 |
专做原装正品,假一罚百! |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
ISC/固电 |
23+ |
TO-247 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
APT |
QQ咨询 |
TO-03 |
118 |
全新原装 研究所指定供货商 |
|||
APT |
24+ |
8866 |
|||||
APT |
25+ |
80 |
公司优势库存 热卖中!! |
||||
MICROCHIP/微芯 |
2406+ |
33000 |
诚信经营!进口原装!量大价优! |
||||
APT |
22+ |
TO-3P |
8200 |
原装现货库存.价格优势!! |
|||
APT |
24+ |
TO-247 |
9950 |
郑重承诺只做原装进口现货 |
|||
APT |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
APT4020芯片相关品牌
APT4020规格书下载地址
APT4020参数引脚图相关
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APT4020数据表相关新闻
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2019-3-5
DdatasheetPDF页码索引
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