N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS=400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

POWER MOS V 400V 26.0A 0.20 Ohm / 400V 23.0A 0.25 Ohm

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection.

HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE

DC Response, Silicon MEMS

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Adafruit NeoTrellis M4 with Enclosure and Buttons Kit Pack

文件：1.95471 Mbytes Page：4 Pages

EPDM Snap-In Liquid Tight Bushings

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