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APT10M11价格
参考价格:¥198.8392
型号:APT10M11JVRU2 品牌:Microsemi 备注:这里有APT10M11多少钱,2024年最近7天走势,今日出价,今日竞价,APT10M11批发/采购报价,APT10M11行情走势销售排行榜,APT10M11报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | |||
ISOTOPBoostchopperMOSFETPowerModule Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstand | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ISOTOPBoostchopperMOSFETPowerModule Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstand | ADPOW Advanced Power Technology | |||
ISOTOPBuckchopperMOSFETPowerModule Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegrati Benefits •Outstandin | ADPOW Advanced Power Technology | |||
ISOTOPBuckchopperMOSFETPowerModule Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstand | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.. •FasterSwitch | ADPOW Advanced Power Technology | |||
HighVoltageN-ChannelenhancementmodepowerMOSFET 文件:66.25 Kbytes Page:4 Pages | ADPOW Advanced Power Technology | |||
HighVoltageN-ChannelenhancementmodepowerMOSFET 文件:121.37 Kbytes Page:4 Pages | ADPOW Advanced Power Technology | |||
HighVoltageN-ChannelenhancementmodepowerMOSFET 文件:66.25 Kbytes Page:4 Pages | ADPOW Advanced Power Technology |
APT10M11产品属性
- 类型
描述
- 型号
APT10M11
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
High Voltage N-Channel enhancement mode power MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
APT |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
||||
Microsemi Corporation |
23+ |
SOT2274 miniBLOC |
9000 |
原装正品,支持实单 |
|||
MicrosemiPowerProductsGr |
23+ |
MOSFETN-CH100V142ASOT227 |
1700 |
专业代理销售半导体模块,能提供更多数量 |
|||
APT |
06+09 |
220 |
公司优势库存 热卖中! |
||||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
12+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
Microsemi Corporation |
22+ |
SOT2274 miniBLOC |
9000 |
原厂渠道,现货配单 |
|||
Microchip Technology |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
APT |
23+ |
TO-3P |
1896 |
公司优势库存热卖全新原装!欢迎来电 |
|||
APT |
24+ |
SOT227 |
564 |
APT10M11规格书下载地址
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DdatasheetPDF页码索引
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