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APT10M11JVR价格
参考价格：￥198.8392
型号：APT10M11JVRU2 品牌：Microsemi 备注：这里有APT10M11JVR多少钱，2025年最近7天走势，今日出价，今日竞价，APT10M11JVR批发/采购报价，APT10M11JVR行情走势销售排行榜，APT10M11JVR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
APT10M11JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW |   | |
ISOTOP Boost chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand | Microsemi 美高森美 | | ||
ISOTOP Boost chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand | ADPOW | | ||
ISOTOP Buck chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integrati Benefits • Outstandin | ADPOW | | ||
ISOTOP Buck chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand | Microsemi 美高森美 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switch | ADPOW | | ||
High Voltage N-Channel enhancement mode power MOSFET 文件：121.37 Kbytes Page：4 Pages | ADPOW | | ||
High Voltage N-Channel enhancement mode power MOSFET 文件：66.25 Kbytes Page：4 Pages | ADPOW | |
APT10M11JVR产品属性
- 类型
描述
- 型号
APT10M11JVR
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
12+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
06+09 |
220 |
公司优势库存 热卖中! |
||||
APT |
2023+ |
MODULE |
115 |
主打螺丝模块系列 |
|||
Microsemi Corporation |
22+ |
SOT2274 miniBLOC |
9000 |
原厂渠道,现货配单 |
|||
APT |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROSEMI |
638 |
原装正品 |
|||||
APT |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
APT |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
APT10M11JVR规格书下载地址
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DdatasheetPDF页码索引
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