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APT10M11JVR价格
参考价格：￥198.8392
型号：APT10M11JVRU2 品牌：Microsemi 备注：这里有APT10M11JVR多少钱，2026年最近7天走势，今日出价，今日竞价，APT10M11JVR批发/采购报价，APT10M11JVR行情走势销售排行榜，APT10M11JVR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT10M11JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW |   | |
APT10M11JVR | POWER MOS V 100V 144A 0.011 Ohm | APT 晶科电子 | | |
ISOTOP Boost chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand | MICROSEMI 美高森美 | | ||
ISOTOP Boost chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand | ADPOW | | ||
ISOTOP Buck chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integrati Benefits • Outstandin | ADPOW | | ||
ISOTOP Buck chopper MOSFET Power Module Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstand | MICROSEMI 美高森美 | | ||
100V/Boost chopper/Si Mosfet modules | MICROCHIP 微芯科技 | | ||
100V/Buck chopper/Si Mosfet modules | MICROCHIP 微芯科技 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switch | ADPOW | | ||
High Voltage N-Channel enhancement mode power MOSFET 文件：121.37 Kbytes Page：4 Pages | ADPOW | | ||
High Voltage N-Channel enhancement mode power MOSFET 文件：66.25 Kbytes Page：4 Pages | ADPOW | |
APT10M11JVR产品属性
- 类型
描述
- 型号
APT10M11JVR
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT原装 |
25+23+ |
TO-264 |
23627 |
绝对原装正品全新进口深圳现货 |
|||
APT |
25+ |
220 |
公司优势库存 热卖中! |
||||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
24+ |
8866 |
|||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
2023+ |
MODULE |
32 |
主打螺丝模块系列 |
|||
APT |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
MICROSEMI |
638 |
原装正品 |
|||||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
Microsemi |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
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APT10M11JVR规格书下载地址
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DdatasheetPDF页码索引
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