Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.86Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

POWER MOS V 1000V 13A 0.860 Ohm

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：66.14 Kbytes Page：4 Pages

FREDFETs

Continuous Hinge with Clamps, Type 12

APPLICATION This easy-to-open, continuous hinge enclosure features screwdown clamps for secure closure and can be used in a wide variety of applications.

Continuous Hinge with Clamps, Type 4

APPLICATION A continuous hinge combined with stainless steel clamps on three sides provide environmental protection and security in indoor or outdoor applications.

AMERICAN CORD SET; 230cm LONG NEMA 5-15P TO IEC 60320 C13, LEFT HANDED

文件：54.76 Kbytes Page：1 Pages

Nylon PCB Supports - Imperial Spacing

文件：126.42 Kbytes Page：1 Pages

Continuous Hinge with Clamps, Type 4

文件：603.13 Kbytes Page：2 Pages