位置：首页 > IC中文资料第1406页 > APT10086BVFRG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT10086BVFRG | FREDFETs | MICROCHIP 微芯科技 |   | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | |
APT10086BVFRG产品属性
- 类型
描述
- 型号
APT10086BVFRG
- 功能描述
MOSFET N-CH 1000V 13A TO-247
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
2026+ |
TO-3P |
328 |
原装正品,欢迎来电咨询! |
|||
APT |
0530+ |
TO-247 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
24+ |
8866 |
|||||
APT |
1624+ |
TO-247 |
1552 |
代理品牌 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
雷达 |
23+ |
TO-268 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROSEMI |
638 |
原装正品 |
|||||
APT |
22+ |
TO-247 |
20000 |
公司只做原装 品质保证 |
APT10086BVFRG芯片相关品牌
APT10086BVFRG规格书下载地址
APT10086BVFRG参数引脚图相关
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APT10086BVFRG数据表相关新闻
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DdatasheetPDF页码索引
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