Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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Identical Specifications: T-MAX or TO-264 Package

文件：79.22 Kbytes Page：4 Pages

Identical Specifications: T-MAX or TO-264 Package

文件：79.22 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

SLOTTED SWITCH

INFRARED LED+PHOTO IC APPLICATIONS ● TIMING DETECTION FOR PRINTERS, TYPEWRITERS AND FACSIMILE

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency