APT1004资料datasheet下载现货行情报价APT-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料第6945页 > APT1004

APT1004价格

参考价格：￥195.9106

型号：APT10045B2LLG 品牌：Microsemi 备注：这里有APT1004多少钱，2026年最近7天走势，今日出价，今日竞价，APT1004批发/采购报价，APT1004行情走势销售排行榜，APT1004报价。

型号	功能描述	生产厂家企业	LOGO
APT1004	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	APT 晶科电子	APT
APT10040B2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10040B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10040LVFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10040LVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10043	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT10043JVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT10043JVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	MICROSEMI 美高森美	MICROSEMI
APT10045B2FLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045B2FLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045B2LL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045B2LL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045JFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045LFLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045LFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045LLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045LLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT1004R2AN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004R2BN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1004R2BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004R2CN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004R2GN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1004R2KN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1004R2KN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RAN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004RBN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1004RBN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RCN	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RCN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1004RDN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1004RGN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004RGN	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RKN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RKN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co	ISC 无锡固电	ISC
APT10040B2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：79.52 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VFR_02	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：79.52 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 文件：78.39 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VR	POWER MOS V 1000V 25A 0.400 Ohm	APT 晶科电子	APT
APT10040B2VR	Identical Specifications: T-MAX or TO-264 Package 文件：79.22 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VR_02	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 文件：78.39 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：79.52 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVFR	POWER MOS V 1000V 25A 0.400 Ohm	APT 晶科电子	APT
APT10040LVR	Identical Specifications: T-MAX or TO-264 Package 文件：79.22 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 文件：78.39 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVRG	Identical Specifications: T-MAX or TO-264 Package 文件：79.22 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10045B2FLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.93 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045B2FLL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.93 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045B2LL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.98 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045B2LL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.98 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：95.1 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JFLL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：95.1 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：69.54 Kbytes Page：2 Pages	ADPOW	ADPOW
APT10045JLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 文件：94.95 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JLL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 文件：94.95 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045LFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.93 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045LLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.98 Kbytes Page：5 Pages	ADPOW	ADPOW
ED1004CT	SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes) FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde	PANJIT 強茂	PANJIT
ER1004FCT	ISOLATION SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 400 Volts CURRENT - 10.0 Amperes) VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig	PANJIT 強茂	PANJIT
UF1004	ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes) FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg	PANJIT 強茂	PANJIT

APT1004产品属性

类型
描述
型号
APT1004
制造商
ADPOW
制造商全称
Advanced Power Technology
功能描述
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1004供应商更多...

更新时间：2026-5-22 13:08:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科达星科技有限公司	APT10045LLL	APT	25+	TO-3PL	27500	原装正品,价格最低!	询价
深圳市高捷芯城科技有限公司	APT10045JLL	Microchip Technology / Atmel	25+	SOT-227-4	6843	样件支持,可原厂排单订货!	询价
浙江永芯科技有限公司	APT10043JVR	Microsemi	23+	标准封装	5000	原厂授权一级代理 IGBT模块可控硅晶闸管熔断器质保	询价
深圳市威尔健半导体有限公司	APT10045B2LL	APT	23+	TO-247Max	50000	全新原装正品现货,支持订货	询价
深圳市华来深电子有限公司	APT1004RKN	APT	23+	TO-220	8560	受权代理!全新原装现货特价热卖!	询价
中天科工半导体（深圳）有限公司	APT1004RAN	APT	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市昌和盛利电子有限公司	APT10043JVR	APT	26+	模块	3562	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市中联芯电子有限公司	APT10045JFLL	APT	25+	MODULE	585	主打螺丝模块系列	询价
华富测量(深圳)传感技术有限公司	APT10045JLL	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价
贸泽芯城（深圳）电子科技有限公司	APT1004RBN	APT	23+	TO-247	12300	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价

APT1004芯片相关品牌

APT1004规格书下载地址

APT1004参数引脚图相关

APT1004数据表相关新闻

APS6408L-OBM-BA
APS6408L-OBM-BA
2023-2-1
APT32F101H6S6
APT32F101H6S6，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-12
APT30DQ60BG 原装优势
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-20
APSG160EC3102MJB5S深圳市光华微科技有限公司0755-83203002
ECST350EIJ272MM20S Nippon Chemi-Con 全系列可售
2020-6-5
APSE6R3EC3471MF08S黑金刚NCC代理渠道原装正品现货
APSE6R3EC3471MF08S黑金刚NCC代理渠道原装正品现货
2020-4-22
APT10M11JVFR，APT150GN120J，APT150GN120JDQ4，APT150GN60J，APT150GN60JDQ4
APT10M11JVFR，APT150GN120J，APT150GN120JDQ4，APT150GN60J，APT150GN60JDQ4
2020-2-23

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109
P110

找IC，尽在114IC

APT1004价格

APT1004产品属性

APT1004供应商更多...

APT1004芯片相关品牌

APT1004规格书下载地址

APT1004参数引脚图相关

APT1004数据表相关新闻

APS6408L-OBM-BA

APT32F101H6S6

APT30DQ60BG 原装优势

APSG160EC3102MJB5S深圳市光华微科技有限公司0755-83203002

APSE6R3EC3471MF08S黑金刚NCC代理渠道原装正品现货

APT10M11JVFR，APT150GN120J，APT150GN120JDQ4，APT150GN60J，APT150GN60JDQ4

DdatasheetPDF页码索引