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APT1004价格

参考价格：￥195.9106

型号：APT10045B2LLG 品牌：Microsemi 备注：这里有APT1004多少钱，2025年最近7天走势，今日出价，今日竞价，APT1004批发/采购报价，APT1004行情走势销售排行榜，APT1004报价。

型号	功能描述	生产厂家企业	LOGO
APT1004	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	APT 晶科	APT
APT10040B2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10040B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10040LVFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10040LVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific	ADPOW	ADPOW
APT10043	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT10043JVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	ADPOW	ADPOW
APT10043JVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching	Microsemi 美高森美	Microsemi
APT10045B2FLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045B2FLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045B2LL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045B2LL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045JFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045LFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT10045LFLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045LLL	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT10045LLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally	ADPOW	ADPOW
APT1004R2AN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004R2BN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1004R2BN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004R2CN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004R2GN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1004R2KN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1004R2KN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RAN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004RBN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
APT1004RBN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RCN	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RCN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
APT1004RDN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c	ISC 无锡固电	ISC
APT1004RGN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC	ISC 无锡固电	ISC
APT1004RGN	N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV™ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RKN	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW	ADPOW
APT1004RKN	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co	ISC 无锡固电	ISC
APT10040B2VFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：79.52 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VFR_02	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：79.52 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 文件：78.39 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VR	POWER MOS V 1000V 25A 0.400 Ohm	APT 晶科	APT
APT10040B2VR	Identical Specifications: T-MAX or TO-264 Package 文件：79.22 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040B2VR_02	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 文件：78.39 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVFR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：79.52 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVFR	POWER MOS V 1000V 25A 0.400 Ohm	APT 晶科	APT
APT10040LVR	Identical Specifications: T-MAX or TO-264 Package 文件：79.22 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 文件：78.39 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10040LVRG	Identical Specifications: T-MAX or TO-264 Package 文件：79.22 Kbytes Page：4 Pages	ADPOW	ADPOW
APT10045B2FLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.93 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045B2FLL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.93 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045B2LL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.98 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045B2LL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.98 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：95.1 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JFLL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：95.1 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 文件：94.95 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045JLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：69.54 Kbytes Page：2 Pages	ADPOW	ADPOW
APT10045JLL_03	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 文件：94.95 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045LFLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.93 Kbytes Page：5 Pages	ADPOW	ADPOW
APT10045LLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：93.98 Kbytes Page：5 Pages	ADPOW	ADPOW
1004	WILMAR??Protective Relays - 1000 Series Phase failure relays protect motors, equipment and personnel from damage or injury caused by open phase, reversed phase sequence, or low voltage in a three phase system. Models are available for 50 and 60 Hz with voltages up to 575 volts. Motor control switchboards are a common application. Opera	MACOM	MACOM
1004DCR	Phase Control Thyristors (Capsule Type) Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers • DC power supplies	NAINA	NAINA
1004	DUAL THRU HOLE 文件：38.76 Kbytes Page：1 Pages	XFMRS	XFMRS

APT1004产品属性

类型
描述
型号
APT1004
制造商
ADPOW
制造商全称
Advanced Power Technology
功能描述
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1004供应商更多...

更新时间：2025-11-26 10:44:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
华富测量(深圳)传感技术有限公司	APT10045JLL	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价
深圳市威雅利发展有限公司	APT10045JLL	Microsemi	1521+	SOT-227	7	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市中联芯电子有限公司	APT10045JFLL	APT	2023+	MODULE	585	主打螺丝模块系列	询价
深圳市卓越微芯电子有限公司	APT10045LLL	APT	25+	TO-3PL	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市高捷芯城科技有限公司	APT10045JFLL	MICROCHIP(美国微芯)	24+	-	7793	支持大陆交货,美金交易。原装现货库存。	询价
深圳市宇集芯电子有限公司	APT10045JLL	Microsemi	24+	N/A	5800	正常排单原厂正规渠道保证原装正品	询价
江苏芯钻时代电子科技有限公司	APT10043JVR	MICROSEMI	24+	MODULE	1000	全新原装现货	询价
深圳市壹芯创科技有限公司	APT10040LVFR	APT	22+	原厂原封	8200	原装现货库存.价格优势!!	询价
深圳市胜彬电子有限公司	APT1004RKN	APT	22+	TO-220	8000	原装正品支持实单	询价
深圳市福安瓯科技有限公司	APT1004RKN	APT	25+	TO	2500	自家优势产品,欢迎来电咨询!	询价

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APS6408L-OBM-BA
APS6408L-OBM-BA
2023-2-1
APT32F101H6S6
APT32F101H6S6，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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2020-2-23

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APT1004价格

APT1004产品属性

APT1004供应商更多...

APT1004芯片相关品牌

APT1004规格书下载地址

APT1004参数引脚图相关

APT1004数据表相关新闻

APS6408L-OBM-BA

APT32F101H6S6

APT30DQ60BG 原装优势

APSG160EC3102MJB5S深圳市光华微科技有限公司0755-83203002

APSE6R3EC3471MF08S黑金刚NCC代理渠道原装正品现货

APT10M11JVFR，APT150GN120J，APT150GN120JDQ4，APT150GN60J，APT150GN60JDQ4

DdatasheetPDF页码索引