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APT1004价格
参考价格：￥195.9106
型号：APT10045B2LLG 品牌：Microsemi 备注：这里有APT1004多少钱，2024年最近7天走势，今日出价，今日竞价，APT1004批发/采购报价，APT1004行情走势销售排行榜，APT1004报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
APT1004 | N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology |  |   |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件：79.52 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件：79.52 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs 文件：78.39 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
IdenticalSpecifications:T-MAXorTO-264Package 文件：79.22 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs 文件：78.39 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. 文件：79.52 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
IdenticalSpecifications:T-MAXorTO-264Package 文件：79.22 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs 文件：78.39 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
IdenticalSpecifications:T-MAXorTO-264Package 文件：79.22 Kbytes Page：4 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：93.93 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：93.93 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：93.98 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：93.98 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：95.1 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：95.1 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS 文件：94.95 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：69.54 Kbytes Page：2 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS 文件：94.95 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：93.93 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. 文件：93.98 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
WILMAR??ProtectiveRelays-1000Series Phasefailurerelaysprotectmotors,equipmentandpersonnelfromdamageorinjurycausedbyopenphase,reversedphasesequence,orlowvoltageinathreephasesystem.Modelsareavailablefor50and60Hzwithvoltagesupto575volts.Motorcontrolswitchboardsareacommonapplication. Opera | MACOM Tyco Electronics |  | | |
PhaseControlThyristors(CapsuleType) Features •Metalcasewithceramicinsulator •Highcurrentrating •Bifacialcooled •Centergatetrigger Applications •DCmotorcontrols •ACcontrollers •DCpowersupplies | NAINA Naina Semiconductor ltd. |  | | |
4Watts,35VoltsPulsedAvionics,960to1215MHz GENERALDESCRIPTION The1004MPisaCOMMONBASEtransistorcapableofproviding4WattsofPulsed,RFoutputpowerintheband960to1215MHz.ThistransistorisspecificallydesignedforpulsedAvionicsamplifierapplications.Itutilizesgoldmetalizationandlowthermalresistancepackagingt | ADPOW Advanced Power Technology | | | |
DUALTHRUHOLE 文件：38.76 Kbytes Page：1 Pages | XFMRS XFMRS，Inc. |  | | |
BrushlessFan 文件：64.31 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | |
APT1004产品属性
- 类型
描述
- 型号
APT1004
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
模块 |
5000 |
全新原装假一赔十 |
|||
APT |
2018+ |
module |
6000 |
全新原装正品现货,假一赔佰 |
|||
APTMICROSEMI |
23+ |
TO-264L |
6000 |
原装正品，支持实单 |
|||
APT |
24+ |
TO264 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
MICROCHIP(美国微芯) |
23+ |
TO2643 |
6000 |
||||
Microsemi Corporation |
21+ |
SOT2274 miniBLOC |
13880 |
公司只售原装,支持实单 |
|||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROSEMI |
23+ |
MODULE |
1000 |
全新原装现货 |
|||
APT |
2020+ |
TO-3PL |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
MICROCHIP(美国微芯) |
23+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
APT1004芯片相关品牌
APT1004规格书下载地址
APT1004参数引脚图相关
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- APSG200ELL681MJB5S+000
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- APSG160ELL821MJB5S
- APSG160ELL561MHB5S
- APSG160ELL271MH06S
- APS-8
- APS750
- APS-536
- APS-534
- APS-532
- APS-530
- APS-5
- APS3626
- APS3625
- APS3623
- APS3611
- APS3608
- APS3606
- APS3605
APT1004数据表相关新闻
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2020-2-23
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