位置:首页 > IC中文资料第5785页 > APT10043
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT10043 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | ||
APT10043 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | APT 晶科电子 | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | MICROSEMI 美高森美 | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | |||
N-Channel MOSFET | MICROCHIP 微芯科技 | |||
12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45 efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliab | ERICSSON 爱立信 | |||
Highly reliable photodiode for VUV detection 文件:46.43 Kbytes Page:2 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |
APT10043产品属性
- 类型
描述
- 型号
APT10043
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
APT |
26+ |
模块 |
3562 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
APT |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
Microsemi Corporation |
22+ |
SOT227 |
9000 |
原厂渠道,现货配单 |
|||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MICROSEMI/美高森美 |
23+ |
MODULE |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
CNNPCHIP/新晶微/RS |
2026+PB |
SOD-323 |
90000 |
全新Cnnpchip |
|||
APT |
22+ |
模块 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
25+ |
模块 |
9630 |
我们只做原装正品现货!量大价优! |
|||
Microsemi |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
APT10043规格书下载地址
APT10043参数引脚图相关
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APT10043数据表相关新闻
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DdatasheetPDF页码索引
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