Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：93.98 Kbytes Page：5 Pages

MOSFET

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：69.54 Kbytes Page：2 Pages

DVB-T channel receiver

GENERAL DESCRIPTION The TDA10045H is a single-chip channel receiver for 2 and 8 kbytes COFDM modulated signals based on the ETSI specification (ETSI 300-744). The device interfaces directly to an IF signal, which could be either 1st or 2nd IF and integrates a 10-bit Analog-to-Digital Converter (A

DVB-T channel receiver

GENERAL DESCRIPTION The TDA10045H is a single-chip channel receiver for 2 and 8 kbytes COFDM modulated signals based on the ETSI specification (ETSI 300-744). The device interfaces directly to an IF signal, which could be either 1st or 2nd IF and integrates a 10-bit Analog-to-Digital Converter (A