位置：首页 > IC中文资料第5707页 > APM9926AK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APM9926AK | Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS=4.5V RDS(ON) =34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Mana | ANPEC 茂达电子 |   | |
APM9926AK | Dual N-Channel Enhancement Mode MOSFET\u0001\u0002\u0003\u0004\u0001\u0002\u0003\u0004 | ANPEC 茂达电子 | | |
Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS=4.5V RDS(ON) =34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Mana | ANPEC 茂达电子 | | ||
Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS=4.5V RDS(ON) =34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Mana | ANPEC 茂达电子 | | ||
Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS=4.5V RDS(ON) =34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Mana | ANPEC 茂达电子 | | ||
Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS=4.5V RDS(ON) =34mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Mana | ANPEC 茂达电子 | | ||
N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applications • Power Manageme | ANPEC 茂达电子 | | ||
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package. | CET 华瑞 | | ||
Dual N-Channel Enhancement Mode Field Effect Transistor Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package. | CET 华瑞 | | ||
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Features • 6.5 A, 20 V. RDS(ON)= 0.030 Ω@ VGS= 4.5 V | FAIRCHILD 仙童半导体 | | ||
Dual N-Channel 2.5V Specified PowerTrench MOSFET 文件：117.54 Kbytes Page：5 Pages | FAIRCHILD 仙童半导体 | |
APM9926AK产品属性
- 类型
描述
- 型号
APM9926AK
- 制造商
ANPEC
- 制造商全称
Anpec Electronics Coropration
- 功能描述
Dual N-Channel Enhancement Mode MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
24+ |
SOP-8 |
27295 |
公司现货库存 支持实单 |
|||
ANPEC/茂达 |
25+ |
SOP-8 |
32360 |
ANPEC/茂达全新特价APM9926AKC即刻询购立享优惠#长期有货 |
|||
VB |
2026+ |
SOP-8 |
17585 |
原装正品,欢迎来电咨询! |
|||
APM |
1311+ |
SOP8 |
450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APM |
24+ |
SOP-8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
APM |
24+ |
SOP8 |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
ANPEC/茂达电子 |
24+ |
SOP-8 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
APM |
25+ |
SOP-8 |
30000 |
代理全新原装现货,价格优势 |
|||
APM |
25+ |
SOP8 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ANPEC |
25+23+ |
SOP8 |
52178 |
绝对原装正品现货,全新深圳原装进口现货 |
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APM9926AK规格书下载地址
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2019-3-7APM-A3A1-H-工业控制IC
特点 *安装在狭小的空间 *易于安装锁老板与单螺杆 *薄5.9毫米边检测装置 *只有8毫米（0.31英寸）宽 * LED指示灯可见从三个方向 * IP67密封
2012-12-4
DdatasheetPDF页码索引
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