N-Channel Enhancement Mode MOSFET

Features • 20V/4A , RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

N-Channel Enhancement Mode MOSFET

Features • 20V/4A , RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

N-Channel Enhancement Mode MOSFET

Features • 20V/4A , RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

Electronic, 7 C #22 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 7 Conductor 22AWG (7x30) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

SpaceMaker™, 7 C #22 Str TC, PO Ins, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 7 Conductor 22AWG (19x34) Tinned Copper, PO Insulation, PVC Outer Jacket, AWM 2937

MACHINE SCREW PAN PHILLIPS 10-32

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LTE Band 7 MIPI ET PA 2.0 mm 횞 2.5 mm Power Amplifier Module

文件：163.82 Kbytes Page：3 Pages

Power Amplifier Module

文件：168.23 Kbytes Page：3 Pages