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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APM4542 | Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 |   | |
APM4542 | Dual Enhancement Mode MOSFET (N-and P-Channel) • N-Channel\n 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V\n RDS(ON)=22mΩ(typ.) @ VGS=4.5V\n• P-Channel\n -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V\n RDS(ON)=51mΩ(typ.) @ VGS=-4.5V\n• Super High Dense Cell Design for Extremely\n Low RDS(ON)\n• Reliable and Rugged\n• SO-8; | ANPEC 茂达电子 | | |
Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 | | ||
Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 | | ||
Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 | | ||
Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 | | ||
Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 | | ||
Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) | ANPEC 茂达电子 | | ||
Dual Enhancement Mode MOSFET (N-and P-Channel) | ANPEC 茂达电子 | | ||
Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF= | MAXIM 美信 | | ||
Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF= | MAXIM 美信 | | ||
30V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS | FAIRCHILD 仙童半导体 | | ||
30V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS | FAIRCHILD 仙童半导体 | | ||
30V Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS | FAIRCHILD 仙童半导体 | |
APM4542产品属性
- 类型
描述
- 型号
APM4542
- 制造商
ANPEC
- 制造商全称
Anpec Electronics Coropration
- 功能描述
Dual Enhancement Mode MOSFET(N-and P-Channel)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANPEC |
26+ |
SOP-8 |
50000 |
芯为深仓现货 |
|||
ANPEC |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
ANPEC/茂达电子 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
ANPEC/茂达电子 |
23+ |
SOP-8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ANPEC |
24+ |
SMD |
6000 |
原装进口香港现货价优 |
|||
ANPEC/茂达电子 |
23+ |
SO-8 |
24190 |
原装正品代理渠道价格优势 |
|||
ANPEC/茂达 |
25+ |
SOP8 |
20300 |
ANPEC/茂达原装特价APM4542即刻询购立享优惠#长期有货 |
|||
ANPEC |
26+ |
SOP8 |
3500 |
原装现货,可开13%税票 |
|||
ANPEC |
17+ |
SOP-8 |
6200 |
100%原装正品现货 |
|||
ANPEC |
23+ |
SOP8 |
56734 |
全新 发货1-2天 |
APM4542规格书下载地址
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APM4542数据表相关新闻
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DdatasheetPDF页码索引
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