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TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

Motorola

摩托罗拉

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC

Philips

飞利浦

N-Channel 60 V(D-S) MOSFET

文件:1.08726 Mbytes Page:8 Pages

VBSEMI

微碧半导体

TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

文件:212.82 Kbytes Page:8 Pages

Motorola

摩托罗拉

TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM

文件:212.82 Kbytes Page:8 Pages

Motorola

摩托罗拉

更新时间:2025-12-25 13:59:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
25+
SOT223
30000
代理全新原装现货,价格优势
VBSEMI/微碧半导体
24+
SOT223
7800
全新原厂原装正品现货,低价出售,实单可谈
NEXPERIA/安世
24+
SOT-223
60000
NEXPERIA/安世
2019+
SOT-223
78550
原厂渠道 可含税出货
NEXPERIA/安世
2511
SOT-223
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
恩XP
23+
08
131550
原厂授权一级代理,专业海外优势订货,价格优势、品种
NEXPERIA/安世
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
2450+
SOT-223
9850
只做原厂原装正品现货或订货假一赔十!
恩XP
25+
SOT-223
38246
NXP/恩智浦全新特价PHT8N06T即刻询购立享优惠#长期有货
NEXPERIA/安世
2025+
SOT-223
5000
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