AP9575AGH找代理商上深圳百域芯科技
Risk Rank:
5.32
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
17 A
Drain-source On Resistance-Max:
0.064 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
P-CHANNEL
Pulsed Drain Current-Max (IDM):
60 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
自公司创立以来，百域芯有一批在元器件行业深耕多年的团队，致力于为客户提供有竞争力的芯片选型方案和解决方案。在竞争白热化的今天公司理念秉承~用心服务，合力共赢。坚定和客户站在一
