位置：首页 > IC中文资料第5661页 > PHT8N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHT8N06 | TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   |
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgenera | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
TrenchMOSÔtransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogic levelfield-effectpowertransistorina plasticenvelopesuitableforsurface mounting.Thedevicefeaturesvery lowon-stateresistanceandhas integralzenerdiodesgivingESD protection.Itisintendedforusein DC-DCconvertersand | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM 文件：212.82 Kbytes Page：8 Pages | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
N-Channel60V(D-S)MOSFET 文件：1.08726 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM 文件：212.82 Kbytes Page：8 Pages | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | |
PHT8N06产品属性
- 类型
描述
- 型号
PHT8N06
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
TrenchMOS transistor Standard level FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
2016+ |
SOT223 |
3965 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
恩XP |
24+ |
SOT-223 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
PHI |
22+ |
SOT223 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEXPERIA/安世 |
23+ |
SOT-223 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
20+ |
SOT223 |
4000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
20+ |
SOT-223 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
恩XP |
23+ |
08 |
131550 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
恩XP |
PBFREE |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
PHI |
21+ |
SOT223 |
9852 |
只做原装正品现货!或订货假一赔十! |
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PHT8N06规格书下载地址
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DdatasheetPDF页码索引
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