位置：首页 > IC中文资料第5661页 > PHT8N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHT8N06 | TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgenera | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
TrenchMOSÔtransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogic levelfield-effectpowertransistorina plasticenvelopesuitableforsurface mounting.Thedevicefeaturesvery lowon-stateresistanceandhas integralzenerdiodesgivingESD protection.Itisintendedforusein DC-DCconvertersand | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt | MotorolaMotorola, Inc 摩托罗拉 |  | | |
TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM 文件：212.82 Kbytes Page：8 Pages | MotorolaMotorola, Inc 摩托罗拉 | | | |
N-Channel60V(D-S)MOSFET 文件：1.08726 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM 文件：212.82 Kbytes Page：8 Pages | MotorolaMotorola, Inc 摩托罗拉 | | |
PHT8N06产品属性
- 类型
描述
- 型号
PHT8N06
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
TrenchMOS transistor Standard level FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
21+ |
SOT223 |
19600 |
一站式BOM配单 |
|||
NXP |
19+ 20+ |
SOT223 |
32350 |
深圳存库原装现货 |
|||
PHILIPS/飞利浦 |
22+ |
SOT223 |
100000 |
代理渠道/只做原装/可含税 |
|||
TI |
2022+ |
WSON10 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NXP |
1122+ |
SOT223 |
22008 |
全新原装,支持实单,假一罚十,德创芯微 |
|||
NXP/恩智浦 |
22+ |
SOT223 |
90944 |
终端免费提供样品 可开13%增值税发票 |
|||
NXP/恩智浦 |
22+ |
SOT223 |
90944 |
||||
PHILIPS |
2023+ |
SOT223 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
PHILIPS |
21+ |
SOT223 |
6500 |
全新原装现货 |
|||
NXP |
2016+ |
SOT223 |
3965 |
只做原装,假一罚十,公司可开17%增值税发票! |
PHT8N06芯片相关品牌
PHT8N06规格书下载地址
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超薄型致动器具有极短的响应时间，可实现各种各样的振动形式
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