包装：散装 描述：TERM CVR 600/800 SET OF 2 继电器 配件

包装：盒 描述：TERM CVR 600/800 SET OF 2 继电器 配件

Fixed 5V output non-isolated AC/DC converter chip

Product Features ■ Built-in 500V high-reliability MOSFET ■ Built-in high-voltage start-up ■ Suitable for various architectures including Buck, Buck-Boost, and Flyback ■ Fixed output voltage of 5V ■ Semi-enclosed steady-state output current capability of 150mA @230VAC ■ Frequency reduction mo

Fixed 5V output non-isolated AC/DC converter chip

Product Features ■ Built-in 500V high-reliability MOSFET ■ Built-in high-voltage start-up ■ Suitable for various architectures including Buck, Buck-Boost, and Flyback ■ Fixed output voltage of 5V ■ Semi-enclosed steady-state output current capability of 150mA @230VAC ■ Frequency reduction mo

Fixed 5V output non-isolated AC/DC converter chip

Product Features ■ Built-in 500V high-reliability MOSFET ■ Built-in high-voltage start-up ■ Suitable for various architectures including Buck, Buck-Boost, and Flyback ■ Fixed output voltage of 5V ■ Semi-enclosed steady-state output current capability of 150mA @230VAC ■ Frequency reduction mo

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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