| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv | A-POWER 富鼎先进电子 |   | ||
Lower On-resistance, Simple Drive Requirement Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼Lower On-resistance ▼Simple Drive Req | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼Lower On-resistance ▼Simple Drive Req | A-POWER 富鼎先进电子 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -30V, ID= -12A RDS(ON) | BYCHIP 百域芯 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -30V, ID= -12A RDS(ON) | BYCHIP 百域芯 | | ||
Simple Drive Requirement, Low On-resistance Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low | A-POWER 富鼎先进电子 | | ||
Low On-resistance, Simple Drive Requirement 文件：104.23 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：70.54 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：104.22 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：70.54 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Low On-resistance, Simple Drive Requirement 文件：100.87 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：100.87 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Power MOSFETs | APEC 富鼎先进 | | ||
Power MOSFETs | APEC 富鼎先进 | | ||
Fast Switching Characteristic 文件：64.73 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：70.54 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Power MOSFETs | APEC 富鼎先进 | | ||
Simple Drive Requirement, Lower On-resistance 文件：101.02 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：101.02 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：66.22 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Low On-resistance, Simple Drive Requirement 文件：101.38 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：101.38 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：67.17 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
丝印代码：6679B；P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：110.94 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching Characteristic 文件：105.44 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：222.51 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：105.44 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：59.2 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Low Gate Charge, Single Drive Requirement 文件：159 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Single Drive Requirement 文件：159 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：63.62 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：105.44 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：222.51 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：131.41 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：100.59 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：207.41 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：67.94 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：58.66 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：155.62 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：155.62 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：207.41 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：68.03 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：68.15 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：68.15 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：58.66 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：58.66 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：102.95 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance 文件：102.96 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE 文件：80.65 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE 文件：80.65 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
30 Volt P-Channel PowerTrench MOSFET This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O | FAIRCHILD 仙童半导体 | | ||
30 Volt P-Channel PowerTrench MOSFET This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O | FAIRCHILD 仙童半导体 | | ||
Direct Conversion FSK Data Receiver Direct Conversion FSK Data Receiver The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a demodulated data stream. Adjacent channel rejection is provided using tuneable gyr | MITEL | | ||
128-common x 132-segment BIT MAP LCD DRIVER 文件：598.5 Kbytes Page：46 Pages | NJRC 日本无线 | | ||
128-common x 132-segment BIT MAP LCD DRIVER 文件：598.5 Kbytes Page：46 Pages | NJRC 日本无线 | |
AP6679产品属性
- 类型
描述
- Configuration：
Single
- Type：
P
- VDS (V)：
-30
- VGS (±V)：
20
- RDS(ON) (mΩ max)/10V：
9
- RDS(ON) (mΩ max)/4.5V：
15
- Ciss (pF)：
3500/5600
- Qg (nC)：
44/70
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APEC |
25+23+ |
TO-252 |
17986 |
绝对原装正品全新进口深圳现货 |
|||
APEC |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
24+ |
TO-252 |
198 |
|||||
APEC |
25+ |
TO-252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
APEC |
16+ |
你问我 |
10000 |
只说一遍APEC富鼎正规授权代理证件齐全进口原装假一罚 |
|||
SR |
23+ |
TO-252-2 |
5000 |
原装正品,假一罚十 |
|||
APEC(富鼎) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
APEC |
21+ |
TO-252 |
6000 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
APEC/富鼎 |
25+ |
TO-252 |
32360 |
APEC/富鼎全新特价AP6679GH-HF即刻询购立享优惠#长期有货 |
|||
APEC |
15+ |
TO252 |
1900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
AP6679芯片相关品牌
AP6679规格书下载地址
AP6679参数引脚图相关
- bc01
- ba028
- b533
- avr单片机
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- atmega8
- atmega16
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- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- AP7217A
- AP7217
- AP7215
- AP7201
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- AP7115
- AP70N06
- AP700D
- AP700C
- AP6982M
- AP6923O
- AP6714
- AP6-7062-220
- AP6-7062-216
- AP6-7062-215
- AP6-7062-211
- AP6-7062-208
- AP6-7062-207
- AP6-7062-202
- AP6-6930-1
- AP6683GYT-HF
- AP6681GMT-HF
- AP6680SGYT-HF
- AP6680GM
- AP6680CGYT-HF
- AP6680BGYT-HF
- AP6680BGM-HF
- AP6680AGM
- AP6679S
- AP6679P
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- AP6679GS
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- AP6-5995-002
- AP6-5995-001
- AP65550
- AP65503
- AP65502
- AP65500
- AP65453
- AP65450
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- AP65402
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- AP65355
- AP65353
- AP65251
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- AP65200S-13
- AP65101
- AP6508FE-7
- AP6508FE-13
- AP6508FE
- AP6508
- AP6507SP-13
- AP6507
- AP6503SP-13
- AP6503ASP-13
- AP6503A
- AP6503
- AP6502SP-13
- AP6502ASP-13
- AP6502A
- AP6502
- AP64T-128
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- AP64GAS203
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AP6679数据表相关新闻
AP68255Q/355Q和AP6A255Q/355K异步降压转换器
Diodes高压内部补偿DC/DC降压转换器的默认开关频率为300 kHz
2025-10-9AP64GAH355B
AP64GAH355B
2023-4-28AP65111AWU-7
AP65111AWU-7
2022-3-7AP6901GSM-HF
AP6901GSM-HF
2021-10-18AP6441
AP6441
2021-9-17AP6906GH-HF找代理商上深圳百域芯科技
AP6906GH-HF找代理商上深圳百域芯科技 制造商 Advanced Power Electronics Corp HIGH 5.8 风险等级 设计 制造 长期 芯片详细信息 Source Content uid: AP6906GH-HF Manufacturer Part Number: AP6906GH-HF Part Life Cycle Code: Contact Manufacturer Ihs Manufacturer: ADVANCED POWER
2021-7-1
DdatasheetPDF页码索引
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