位置：首页 > IC中文资料第12182页 > AP6679
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv | A-POWER 富鼎先进电子 |   | ||
Lower On-resistance, Simple Drive Requirement Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼Lower On-resistance ▼Simple Drive Req | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼Lower On-resistance ▼Simple Drive Req | A-POWER 富鼎先进电子 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -30V, ID= -12A RDS(ON) | Bychip 百域芯 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -30V, ID= -12A RDS(ON) | Bychip 百域芯 | | ||
Simple Drive Requirement, Low On-resistance Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low | A-POWER 富鼎先进电子 | | ||
Low On-resistance, Simple Drive Requirement 文件：104.23 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：70.54 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：104.22 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：70.54 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Low On-resistance, Simple Drive Requirement 文件：100.87 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：100.87 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Power MOSFETs | APEC 富鼎先进 | | ||
Power MOSFETs | APEC 富鼎先进 | | ||
Fast Switching Characteristic 文件：64.73 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：70.54 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Power MOSFETs | APEC 富鼎先进 | | ||
Simple Drive Requirement, Lower On-resistance 文件：101.02 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：101.02 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：66.22 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Low On-resistance, Simple Drive Requirement 文件：101.38 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：101.38 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：67.17 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：110.94 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching Characteristic 文件：105.44 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：222.51 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：105.44 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：59.2 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Low Gate Charge, Single Drive Requirement 文件：159 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Single Drive Requirement 文件：159 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：63.62 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：105.44 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：222.51 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：131.41 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：100.59 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：207.41 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：67.94 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：58.66 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：155.62 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：155.62 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：207.41 Kbytes Page：6 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：68.03 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：68.15 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：68.15 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：58.66 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：58.66 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement 文件：102.95 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Lower On-resistance 文件：102.96 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE 文件：80.65 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE 文件：80.65 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv | A-POWER 富鼎先进电子 | | ||
P-Channel 30-V (D-S) MOSFET 文件：998.82 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：991.33 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：991.29 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30 V (D-S) MOSFET 文件：1.02315 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
AP6679产品属性
- 类型
描述
- 型号
AP6679
- 制造商
A-POWER
- 制造商全称
Advanced Power Electronics Corp.
- 功能描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APEC |
16+ |
你问我 |
10000 |
只说一遍APEC富鼎正规授权代理证件齐全进口原装假一罚 |
|||
APEC |
21+ |
TO-252 |
6000 |
绝对有现货,不止网上数量!原装正品,假一赔十! |
|||
APEC |
25+ |
SOT-252 |
160 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
APEC/富鼎 |
24+ |
TO-252 |
22055 |
郑重承诺只做原装进口现货 |
|||
APEC/富鼎 |
21+/22+ |
BGA |
6000 |
原装保证,持续供货 |
|||
APEC |
23+ |
TO-252 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
APEC/富鼎 |
24+ |
NA/ |
8887 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
APEC/富鼎 |
25+ |
TO-252 |
32360 |
APEC/富鼎全新特价AP6679GH-HF即刻询购立享优惠#长期有货 |
|||
APECORP |
24+/25+ |
501 |
原装正品现货库存价优 |
||||
APEC |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
AP6679芯片相关品牌
AP6679规格书下载地址
AP6679参数引脚图相关
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AP6679数据表相关新闻
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2021-7-1
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