P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -12A RDS(ON)

Power MOSFETs

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -12A RDS(ON)

Simple Drive Requirement, Low On-resistance

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple Drive Requirement

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Fast Switching Characteristic

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET

文件：991.33 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

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P-Channel 30 V (D-S) MOSFET

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