位置：首页 > IC中文资料第6675页 > AP4407
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AP4407 | MOSFET场效应管 | SHIWEISEMI 世微半导体 |   | |
AP4407 | 通用MOS | ETC 知名厂家 | ETC | |
AP4407 | Power Mosfets | ETC 知名厂家 | ETC | |
P-CHANNEL ENHANCEMENT MODE Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 isolation package is universally preferred for all commercial-industrial applications and suited for l | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-indust | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement, Low On-resistance BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surf | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Simple Drive Requirement Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low vo | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 isolation package is universally preferred for all commercial-industrial applications and suited for l | A-POWER 富鼎先进电子 | | ||
Lower On-resistance, Fast Switching Characteristic Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications. ▼ | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f | A-POWER 富鼎先进电子 | | ||
P-Channel 30-V (D-S) MOSFET 文件：996.4 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 30-V (D-S) MOSFET 文件：996.38 Kbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel MOSFET uses advanced trench technology 文件：1.00174 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
Simple Drive Requirement 文件：213.84 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：57.76 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：59.48 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：59.48 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：103.64 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Simple Drive Requirement 文件：100.06 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
Fast Switching Characteristic 文件：103.57 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
Adafruit MLX90640 IR Thermal Camera Breakout - 55 Degree 文件：1.07172 Mbytes Page：3 Pages | Adafruit | | ||
Push Rivet-Arrow 文件：70.97 Kbytes Page：1 Pages | Heyco | | ||
P-Channel 30-V (D-S) MOSFET 文件：1.00297 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
P-Channel Enhancement Mode MOSFET 文件：459.69 Kbytes Page：4 Pages | HOTTECH 合科泰 | | ||
30V P-Channel Increased MOS FET 文件：232.79 Kbytes Page：3 Pages | FUMAN 富满微 | |
AP4407产品属性
- 类型
描述
- 型号
AP4407
- 制造商
A-POWER
- 制造商全称
Advanced Power Electronics Corp.
- 功能描述
P-CHANNEL ENHANCEMENT MODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APEC/富鼎 |
24+ |
NA/ |
4050 |
原装现货,当天可交货,原型号开票 |
|||
APEC |
2016+ |
SOP-8 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
APEC |
2430+ |
SOP8 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
APEC/富鼎 |
新年份 |
SOP-8 |
33288 |
原装正品现货,实单带TP来谈! |
|||
APEC/富鼎 |
23+ |
SOP |
6000 |
专业配单保证原装正品假一罚十 |
|||
APEC |
25+ |
TO-263 |
1337 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
APEC/富鼎 |
25+ |
SOP8 |
15000 |
全新原装现货,价格优势 |
|||
APEC/富鼎 |
25+ |
SOP-8 |
32579 |
APEC/富鼎全新特价AP4407GM-HF即刻询购立享优惠#长期有货 |
|||
APEC/富鼎 |
22+ |
SOP |
12245 |
现货,原厂原装假一罚十! |
|||
铨力半导体 |
21+ |
SOP-8 |
200 |
只做原装鄙视假货15118075546 |
AP4407芯片相关品牌
AP4407规格书下载地址
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DdatasheetPDF页码索引
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