P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-indust

P-Channel 30-V (D-S) MOSFET

文件：996.4 Kbytes Page：9 Pages

Simple Drive Requirement, Low On-resistance

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surf

P-Channel 30-V (D-S) MOSFET

文件：996.38 Kbytes Page：9 Pages

P-Channel MOSFET uses advanced trench technology

文件：1.00174 Mbytes Page：5 Pages

Simple Drive Requirement

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Simple Drive Requirement

文件：57.76 Kbytes Page：5 Pages

P-Channel Enhancement Mode MOSFET

文件：459.69 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00297 Mbytes Page：9 Pages

Push Rivet-Arrow

文件：70.97 Kbytes Page：1 Pages

30V P-Channel MOSFET

文件：192.2 Kbytes Page：5 Pages

30V P-Channel Increased MOS FET

文件：232.79 Kbytes Page：3 Pages