P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-indust

P-Channel 30-V (D-S) MOSFET

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Power MOSFETs

Simple Drive Requirement, Low On-resistance

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surf

P-Channel 30-V (D-S) MOSFET

文件：996.38 Kbytes Page：9 Pages

P-Channel MOSFET uses advanced trench technology

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Simple Drive Requirement

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Simple Drive Requirement

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P-Channel Enhancement Mode MOSFET

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P-Channel 30-V (D-S) MOSFET

文件：1.00297 Mbytes Page：9 Pages

Push Rivet-Arrow

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Adafruit MLX90640 IR Thermal Camera Breakout - 55 Degree

文件：1.07172 Mbytes Page：3 Pages

30V P-Channel Increased MOS FET

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