| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOTF7S65 | 650V 7A a MOS Power Transistor General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 |   | |
AOTF7S65 | 650V 7A a MOS General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 | | |
AOTF7S65 | isc N-Channel MOSFET Transistor 文件：296.29 Kbytes Page：2 Pages | ISC 无锡固电 | | |
AOTF7S65 | 高压MOSFET (500V - 1000V) | AOS 美国万代 | | |
650V 7A a MOS General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 | | ||
650V 7A a MOS Power Transistor General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 | | ||
N-Channel 650V (D-S)Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | ||
650V 7A a MOS General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar | AOSMD 万国半导体 | | ||
isc N-Channel MOSFET Transistor 文件：299.08 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：314.3 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
24+ |
TO-220F |
19730 |
公司现货库存 支持实单 |
|||
AOS/万代 |
25+ |
TO-220F |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
AOS |
22+ |
220 |
20000 |
公司只做原装 品质保证 |
|||
AOS/万代 |
23+ |
TO220F |
30000 |
原装正品假一罚十,代理渠道价格优 |
|||
AOS万代 |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
AOS/万代 |
22+ |
TO220F |
25000 |
AOS/万代全系列在售 |
|||
AOS(万代) |
24+ |
标准封装 |
6913 |
我们只是原厂的搬运工 |
|||
AOS/万代 |
21+ |
TO-220F |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/万代 |
2450+ |
TO-220F |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AOS/万代 |
23+ |
TO-220F |
630090 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
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AOTF7S65规格书下载地址
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DdatasheetPDF页码索引
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