isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 10A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.75Ω (Max) • 100 avalanche tested • Minimum Lot-to-

500V, 10A N-Channel MOSFET with Fast Recovery Diode

General Description The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part c

N-Channel 650 V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

高压MOSFET (500V - 1000V)

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL POWER MOSFET

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10A 500V N-channel enhanced field effect transistor

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10A 500V N-channel enhanced field effect transistor

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500V N-Channel MOSFET Improved dv/dt capability

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