iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=10A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) •100avalanchetested •MinimumLot-to-

500V,10AN-ChannelMOSFETwithFastRecoveryDiode

GeneralDescription TheAOTF10N50FDhasbeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartc

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

10Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

10A,500VN-CHANNELPOWERMOSFET

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10A500VN-channelenhancedfieldeffecttransistor

文件：949.66 Kbytes Page：6 Pages

10A500VN-channelenhancedfieldeffecttransistor

文件：949.77 Kbytes Page：6 Pages

500VN-ChannelMOSFETImproveddv/dtcapability

文件：992.82 Kbytes Page：10 Pages