MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

30V N-Channel MOSFET

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Laser Driver Oscillator

Laser Driver Oscillator The EL6202 consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package allo

Laser Driver Oscillator

General Description The EL6202C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package all

Laser Driver Oscillator

General Description The EL6202C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package all

DC/DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowa

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

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