Infrared Emitting Diode

DESCRIPTION The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half inten

封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 875NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode, 875 nm, GaAlAs

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GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

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Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

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Infrared Emitting Diode, 875 nm, GaAlAs

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Laser Driver Oscillator

Laser Driver Oscillator The EL6202 consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package allo

Laser Driver Oscillator

General Description The EL6202C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package all

Laser Driver Oscillator

General Description The EL6202C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package all

DC/DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowa