DC/DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowa

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6

Bipolar Transistor (–)30V, (–)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0

DC / DC Converter Applications

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Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6

Bipolar Transistor (–)30V, (–)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0

封装/外壳：6-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1.5A 6MCPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Laser Driver Oscillator

Laser Driver Oscillator The EL6202 consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package allo

Laser Driver Oscillator

General Description The EL6202C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package all

Laser Driver Oscillator

General Description The EL6202C consists of a variable amplitude, push only, oscillator that also supplies the laser DC current. It is designed to easily interface to existing ROM controllers, reducing parts count, and power dissipation. The reduction of parts count and the small package all

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

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