650V,7A N-Channel MOSFET

General Description The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability

高压MOSFET (500V - 1000V)

isc N-Channel MOSFET Transistor

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N-Channel MOSFET uses advanced trench technology

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7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

650V N-Channel Power MOSFET

Features ● RDS(ON)

7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET

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