| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOD607 | Complementary Enhancement Mode Field Effect Transistor General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a | AOSMD 万国半导体 |   | |
AOD607 | Complementary Enhancement Mode Field Effect Transistor 文件：215.37 Kbytes Page：9 Pages | AOSMD 万国半导体 | | |
AOD607 | MOSFET | ETC 知名厂家 | ETC | |
AOD607 | 场效应管 | hxymos 华轩阳电子 | | |
AOD607 | MOSFET：Complementary | AOS 美国万代 | | |
30V Complementary MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen-Free Compliant Applications • Pch+Nch Complementary MOSFET for DC-FAN Product Summary Q1 Q2 VDS | AOSMD 万国半导体 | | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD607 is Pbfree (meets ROHS & Sony 259 specifications). AOD607L is a | AOSMD 万国半导体 | | ||
Complementary Enhancement Mode Field Effect Transistor 文件：215.37 Kbytes Page：9 Pages | AOSMD 万国半导体 | | ||
Extrusion Excellent durability Excellent properties Excellent structural strength | NYLENE | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
Two Terminal Metal Element Current Sense 文件：119.98 Kbytes Page：1 Pages | OHMITE | | ||
Two Terminal Metal Element Current Sense 文件：119.98 Kbytes Page：1 Pages | OHMITE | | ||
Two Terminal Metal Element Current Sense 文件：119.98 Kbytes Page：1 Pages | OHMITE | |
AOD607产品属性
- 类型
描述
- 型号
AOD607
- 功能描述
MOSFET COMPL 30V 12A TO252
- RoHS
是
- 类别
分离式半导体产品 >> FET - 阵列
- 系列
-
- 产品目录绘图
8-SOIC Mosfet Package
- 标准包装
1
- 系列
- FET
- 型
2 个 N 沟道（双） FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
60V 电流 - 连续漏极(Id) @ 25°
- C
3A 开态Rds（最大）@ Id, Vgs @ 25°
- C
75 毫欧 @ 4.6A，10V Id 时的
- Vgs(th)（最大）
3V @ 250µA 闸电荷(Qg) @
- Vgs
20nC @ 10V 输入电容(Ciss) @
- Vds
- 功率 -
- 最大
1.4W
- 安装类型
表面贴装
- 封装/外壳
PowerPAK? SO-8
- 供应商设备封装
PowerPAK? SO-8
- 包装
Digi-Reel®
- 产品目录页面
1664(CN2011-ZH PDF)
- 其它名称
SI7948DP-T1-GE3DKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
AOS/万代 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ALPHA |
22+ |
SOT-252-5 |
100000 |
代理渠道/只做原装/可含税 |
|||
AOS |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
AOS |
24+ |
TO-252 |
39500 |
进口原装现货 支持实单价优 |
|||
AOS/万代 |
23+ |
TO252-4L |
30000 |
原装正品假一罚十,代理渠道价格优 |
|||
AOS(万代) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
HXY MOSFET(华轩阳电子) |
20+ |
TO-252-4L |
2500 |
||||
AOS/万代 |
24+ |
TO252 |
425 |
大批量供应优势库存热卖 |
|||
AOS(万代) |
23+ |
标准封装 |
20000 |
正规渠道,只有原装! |
AOD607芯片相关品牌
AOD607规格书下载地址
AOD607参数引脚图相关
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2019-3-28
DdatasheetPDF页码索引
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