AOD413价格

参考价格:¥1.7294

型号:AOD4130 品牌:Alpha 备注:这里有AOD413多少钱,2025年最近7天走势,今日出价,今日竞价,AOD413批发/采购报价,AOD413行情走势销售排行榜,AOD413报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AOD413

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets

AOSMD

万国半导体

AOD413

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-12 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

AOD413

isc P-Channel MOSFET Transistor

文件:347.96 Kbytes Page:2 Pages

ISC

无锡固电

AOD413

MOSFET

WXDH

东海半导体

AOD413

MOSFET

ETC

知名厂家

AOD413

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

60V N-Channel MOSFET

General Description The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. General Fe

EVVOSEMI

翊欧

N-Channel 6 0-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

VBSEMI

微碧半导体

60V N-Channel MOSFET

General Features VDS 60V ID (at VGS=10V) 30A RDS(ON) (at VGS=10V)

UMW

友台半导体

60V N-Channel MOSFET

General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro

AOSMD

万国半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power manageme

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 85A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD4132 is Pb-free (meets ROHS & Sony 259 specificat

AOSMD

万国半导体

30V N-Channel MOSFET

Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON)

UMW

友台半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

30V N-Channel MOSFET

Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON)

EVVOSEMI

翊欧

N-Channel SDMOSTM POWER Transistor

General Description The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications. -RoHS

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

ISC

无锡固电

isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= -12A@ TC=25℃ • Drain Source Voltage- : VDSS=-40V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

ISC

无锡固电

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS

AOSMD

万国半导体

P-Channel Enhancement Mode MOSFETl

Features Vos=-40V ID=-30 A ROS(ON)

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

AOSMD

万国半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件:455.52 Kbytes Page:6 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

文件:455.52 Kbytes Page:6 Pages

AOSMD

万国半导体

40V P-Channel MOSFET

文件:212.62 Kbytes Page:6 Pages

AOSMD

万国半导体

包装:卷带(TR) 描述:MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

40V P-Channel MOSFET

文件:212.62 Kbytes Page:6 Pages

AOSMD

万国半导体

SOT23 NPN silicon planar avalanche transistor

文件:136.74 Kbytes Page:6 Pages

Zetex

Detectable Buried Barricade Tapes 400 Series

文件:53.73 Kbytes Page:2 Pages

3M

Single & Dual Output, 4W Ultra-Wide Input Range DC/DC Converters

文件:175.6 Kbytes Page:2 Pages

MPD

MPD (Memory Protection Devices)

Mini Gender Changer

文件:95.41 Kbytes Page:1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AOD413产品属性

  • 类型

    描述

  • 型号

    AOD413

  • 功能描述

    MOSFET P-CH -40V -24A TO-252

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
24+
TO-252
12048
原厂可订货,技术支持,直接渠道。可签保供合同
ALPHA
2016+
TO-252
3000
只做原装,假一罚十,公司可开17%增值税发票!
AOS万代
100000
代理渠道/只做原装/可含税
AOS(万代)/TECH PUBLIC(台舟)
24+
TO-252
5000
诚信服务,绝对原装原盘。
AOS
24+25+
TO-252
15000
原厂原装终端客户免费申请样品
AOS/万代
20+
TO-252
1378
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
21+
TO252
20000
只做原装,假一罚十
AOS/万代
24+
TO-252
498539
免费送样原盒原包现货一手渠道联系
AOS(万代)
24+
TO-252-2(DPAK)
9548
原厂可订货,技术支持,直接渠道。可签保供合同
AOS/万代
21+
TO-252
30000
优势供应 实单必成 可13点增值税

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