P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-12 A (VGS =-10V) ● RDS(ON)

isc P-Channel MOSFET Transistor

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MOSFET

MOSFET

P-Channel Enhancement Mode Field Effect Transistor

60V N-Channel MOSFET

General Description The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. General Fe

N-Channel 6 0-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

60V N-Channel MOSFET

General Features VDS 60V ID (at VGS=10V) 30A RDS(ON) (at VGS=10V)

60V N-Channel MOSFET

General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro

丝印代码：DPAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power manageme

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD4132 is Pb-free (meets ROHS & Sony 259 specificat

30V N-Channel MOSFET

Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

丝印代码：DPAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 85A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

30V N-Channel MOSFET

Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON)

N-Channel SDMOSTM POWER Transistor

General Description The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications. -RoHS

丝印代码：DPAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

丝印代码：40P30；P-Channel Enhancement Mode MOSFETl

Features Vos=-40V ID=-30 A ROS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS

丝印代码：DPAK；isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= -12A@ TC=25℃ • Drain Source Voltage- : VDSS=-40V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

文件：455.52 Kbytes Page：6 Pages

40V P-Channel MOSFET

文件：212.62 Kbytes Page：6 Pages

包装：卷带（TR） 描述：MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

40V P-Channel MOSFET

文件：212.62 Kbytes Page：6 Pages

丝印代码：413；NPN SILICON PLANAR AVALANCHE TRANSISTOR

Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving. Features • Avalanche mode operation • 50A peak av

10 AMPERE POWER TRANSISTORS NPN SILICON

High-Voltage NPN Silicon Transistors . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

Fast Soft Recovery Rectifier

Features ● Hermetically sealed glass envelope ● Glass passivated ● Low reverse current ● Miniature axial leaded Applications    TV and monitor    Electronic ballast    SMPS

NPN SILICON PLANAR AVALANCHE TRANSISTOR

NPN SILICON PLANAR AVALANCHE TRANSISTOR FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Su

NPN SILICON PLANAR AVALANCHE TRANSISTOR

NPN SILICON PLANAR AVALANCHE TRANSISTOR FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Su