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AOD413价格
参考价格:¥1.7294
型号:AOD4130 品牌:Alpha 备注:这里有AOD413多少钱,2025年最近7天走势,今日出价,今日竞价,AOD413批发/采购报价,AOD413行情走势销售排行榜,AOD413报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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AOD413 | P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets | AOSMD 万国半导体 | ||
AOD413 | P-Channel MOSFET ■ Features ● VDS (V) =-40V ● ID =-12 A (VGS =-10V) ● RDS(ON) | KEXIN 科信电子 | ||
AOD413 | isc P-Channel MOSFET Transistor 文件:347.96 Kbytes Page:2 Pages | ISC 无锡固电 | ||
AOD413 | MOSFET | WXDH 东海半导体 | ||
AOD413 | MOSFET | ETC 知名厂家 | ETC | |
AOD413 | P-Channel Enhancement Mode Field Effect Transistor | AOS 美国万代 | ||
60V N-Channel MOSFET General Description The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. General Fe | EVVOSEMI 翊欧 | |||
N-Channel 6 0-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature | VBSEMI 微碧半导体 | |||
60V N-Channel MOSFET General Features VDS 60V ID (at VGS=10V) 30A RDS(ON) (at VGS=10V) | UMW 友台半导体 | |||
60V N-Channel MOSFET General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro | AOSMD 万国半导体 | |||
Isc N-Channel MOSFET Transistor • FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power manageme | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 85A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot | ISC 无锡固电 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD4132 is Pb-free (meets ROHS & Sony 259 specificat | AOSMD 万国半导体 | |||
30V N-Channel MOSFET Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) | UMW 友台半导体 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC | VBSEMI 微碧半导体 | |||
30V N-Channel MOSFET Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) | EVVOSEMI 翊欧 | |||
N-Channel SDMOSTM POWER Transistor General Description The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications. -RoHS | AOSMD 万国半导体 | |||
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot | ISC 无锡固电 | |||
isc P-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= -12A@ TC=25℃ • Drain Source Voltage- : VDSS=-40V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo | ISC 无锡固电 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS | AOSMD 万国半导体 | |||
P-Channel Enhancement Mode MOSFETl Features Vos=-40V ID=-30 A ROS(ON) | TECHPUBLIC 台舟电子 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets | AOSMD 万国半导体 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins | AOSMD 万国半导体 | |||
isc P-Channel MOSFET Transistor FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins | AOSMD 万国半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:455.52 Kbytes Page:6 Pages | AOSMD 万国半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:455.52 Kbytes Page:6 Pages | AOSMD 万国半导体 | |||
40V P-Channel MOSFET 文件:212.62 Kbytes Page:6 Pages | AOSMD 万国半导体 | |||
包装:卷带(TR) 描述:MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ETC 知名厂家 | ETC | ||
40V P-Channel MOSFET 文件:212.62 Kbytes Page:6 Pages | AOSMD 万国半导体 | |||
SOT23 NPN silicon planar avalanche transistor 文件:136.74 Kbytes Page:6 Pages | Zetex | |||
Detectable Buried Barricade Tapes 400 Series 文件:53.73 Kbytes Page:2 Pages | 3M | |||
Single & Dual Output, 4W Ultra-Wide Input Range DC/DC Converters 文件:175.6 Kbytes Page:2 Pages | MPD MPD (Memory Protection Devices) | |||
Mini Gender Changer 文件:95.41 Kbytes Page:1 Pages | ASSMANNAssmann Electronics Inc. 阿斯曼电子 | |||
ALUMINUM CHASSIS 文件:109.8 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |
AOD413产品属性
- 类型
描述
- 型号
AOD413
- 功能描述
MOSFET P-CH -40V -24A TO-252
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AOS |
24+ |
TO-252 |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ALPHA |
2016+ |
TO-252 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
AOS万代 |
100000 |
代理渠道/只做原装/可含税 |
|||||
AOS(万代)/TECH PUBLIC(台舟) |
24+ |
TO-252 |
5000 |
诚信服务,绝对原装原盘。 |
|||
AOS |
24+25+ |
TO-252 |
15000 |
原厂原装终端客户免费申请样品 |
|||
AOS/万代 |
20+ |
TO-252 |
1378 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AOS/万代 |
21+ |
TO252 |
20000 |
只做原装,假一罚十 |
|||
AOS/万代 |
24+ |
TO-252 |
498539 |
免费送样原盒原包现货一手渠道联系 |
|||
AOS(万代) |
24+ |
TO-252-2(DPAK) |
9548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
AOS/万代 |
21+ |
TO-252 |
30000 |
优势供应 实单必成 可13点增值税 |
AOD413规格书下载地址
AOD413参数引脚图相关
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- AOD4142
- AOD4140
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- AOD413Y
- AOD413L
- AOD413A
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- AOD4128
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- AOD4120
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- AOD4112
- AOD4110
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- AOD4106
- AOD4104
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- AOD4100
- AOD410
- AOD409L
- AOD409G
- AOD409
- AOD408L
- AOD408
- AOD407L
- AOD407
- AOD403
- AOD3N80
- AOD3N60
- AOD3N50
- AOD-300
- AOD2N60A
- AOD2N60
- AOD2922
- AOD2908
- AOD2610
- AOD256
- AOD254
- AOD242
- AOD240
- AOD1N60
- AOD11S60
AOD413数据表相关新闻
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2020-10-13
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