P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, ins

P-Channel Enhancement Mode Field Effect Transistor

丝印代码：413；NPN SILICON PLANAR AVALANCHE TRANSISTOR

Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving. Features • Avalanche mode operation • 50A peak av

10 AMPERE POWER TRANSISTORS NPN SILICON

High-Voltage NPN Silicon Transistors . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

Fast Soft Recovery Rectifier

Features ● Hermetically sealed glass envelope ● Glass passivated ● Low reverse current ● Miniature axial leaded Applications    TV and monitor    Electronic ballast    SMPS

NPN SILICON PLANAR AVALANCHE TRANSISTOR

NPN SILICON PLANAR AVALANCHE TRANSISTOR FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Su

NPN SILICON PLANAR AVALANCHE TRANSISTOR

NPN SILICON PLANAR AVALANCHE TRANSISTOR FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators * Su