P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS

isc P-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= -12A@ TC=25℃ • Drain Source Voltage- : VDSS=-40V(Min) • Static Drain-Source On-Resistance : RDS(on) =11mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lo

P-Channel Enhancement Mode MOSFETl

Features Vos=-40V ID=-30 A ROS(ON)

MOSFET

-40V P-Channel MOSFET

P-Channel Enhancement Mode MOSFET

40V P-Channel MOSFET

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包装：卷带（TR） 描述：MOSFET P-CH 40V TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

40V P-Channel MOSFET

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