| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AOB4S60L | N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  |   |
AOB4S60L | 600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | |
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=4A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
Materialspecification 文件：48.89 Kbytes Page：4 Pages | FERROXCUBEFERROXCUBE INC. 飞磁 |  | |
AOB4S60L产品属性
- 类型
描述
- 型号
AOB4S60L
- 功能描述
MOSFET N-CH 600V 4A D2PAK
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
23+ |
NA/ |
3531 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Alpha & Omega Semiconductor In |
23+ |
TO-263(D2Pak) |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
AOS |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
|||
AOS/万代 |
21+ |
TO-263 |
5461 |
原装现货假一赔十 |
|||
AOS/万代 |
21+ |
TO-263 |
5461 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
AOS-美国万代 |
24+25+/26+27+ |
TO-263-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
AOS/万代 |
TO-263 |
265209 |
假一罚十原包原标签常备现货! |
||||
AOS/ 万代 |
23+ |
TO-263 |
1930 |
原装正品,假一罚十! |
|||
AOS/万代 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
AOS/万代 |
23+ |
TO-263 |
24190 |
原装正品代理渠道价格优势 |
AOB4S60L芯片相关品牌
AOB4S60L规格书下载地址
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AOB4S60L数据表相关新闻
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AO8846
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AOD2210，分立半导体产品晶体管
2019-8-15
DdatasheetPDF页码索引
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