N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel Enhancement Mode Field Effect Transistor

N-Channel 40 V (D-S) MOSFET

FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see

中压MOSFET (40V - 400V)

40V N-Channel MOSFET

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 30A@ TC=25℃ • Drain Source Voltage- : VDSS= 40V(Min) • Static Drain-Source On-Resistance : RDS(on) = 10.5mΩ (Max) • 100 avalanche tested • Minimum

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identica

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identica

100V N-Channel MOSFET

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 105A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 9.7mΩ (Max) • 100 avalanche tested • Minimu

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

Improved, SPST/SPDT Analog Switches

General Description Maxim’s redesigned DG417/DG418/DG419 precision, CMOS, monolithic analog switches now feature guaanteed on-resistance matching (3Ω max) between switches and guaranteed on-resistance flatness over the signal range (4Ω max). These switches conduct equally well in either direction

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

1.2關A Max, Single/Dual/Quad, Single-Supply Op Amps

1.2μA Max, Single/Dual/Quad, Single-Supply Op Amps Applications Battery-Powered Systems Medical Instruments Electrometer Amplifiers Intrinsically Safe Systems Photodiode Pre-Amps pH Meters

Dual High-Speed, Low-Power Line Driver

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Dual High-Speed, Low-Power Line Driver

文件：280.71 Kbytes Page：12 Pages