N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identica

N-Channel 40 V (D-S) MOSFET

FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 30A@ TC=25℃ • Drain Source Voltage- : VDSS= 40V(Min) • Static Drain-Source On-Resistance : RDS(on) = 10.5mΩ (Max) • 100 avalanche tested • Minimum

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identica

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 105A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 9.7mΩ (Max) • 100 avalanche tested • Minimu

100V N-Channel MOSFET

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

中压MOSFET (40V - 400V)

MOSFET：N-Channel

Low Voltage and Power Applications

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