N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 105A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 9.7mΩ (Max) • 100 avalanche tested • Minimu

100V N-Channel MOSFET

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

SURFACE MOUNT FUSES

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Low Voltage and Power Applications

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Scalpels and Blades

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Radial-lead. Round profile.

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Mini Gender Changer

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