600V,10A N-Channel MOSFET

General Description The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch

高压MOSFET (500V - 1000V)

isc N-Channel MOSFET Transistor

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N-Channel 650V (D-S)Power MOSFET

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N-Channel 650V (D-S)Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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10A 600V N-channel Enhancement Mode Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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