Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

20V Dual N-Channel MOSFET

文件：252.37 Kbytes Page：5 Pages

20V N+N MOSFET

20V Dual N-Channel MOSFET

Dual N-Channel MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

20V Dual N-Channel MOSFET

文件：252.37 Kbytes Page：5 Pages

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes Page：7 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages

6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：1.62045 Mbytes Page：7 Pages