Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. Features VDS (

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

20V Dual N-Channel MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

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6A竊?0V Dual N-CHANNEL MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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