Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swit

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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MOSFET

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

场效应管

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swit

Dual N-Channel Enhancement Mode MOSFET

Application Battery protection « Battery Powered Systems « Power management | « Motor Control « Portable Power Adaptors ~~

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：422.04 Kbytes Page：4 Pages

300mA CMOS LDO

■ General Description The AME8803/8814 family of positive, linear regulators feature low quiescent current (30mA typ.) with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 package is attractive for Pocket and Hand Held applications. These rugged devices h

4-channel driver IC for optical disk drive

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4-channel driver IC for optical disk drive

文件：51.43 Kbytes Page：5 Pages

SUPER BRIGHT T-1 3/4 (5 mm) LED LAMP - Water Clear

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COLOR TRANSIENT IMPROVOR IC FOR TV

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