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AO8814L中文资料

厂家型号

AO8814L

文件大小

119.06Kbytes

页面数量

4

功能描述

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AOSMD

AO8814L数据手册规格书PDF详情

General Description

The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8814is Pb-free (meets ROHS & Sony 259 specifications). AO8814L is a Green Product ordering option. AO8814 and AO8814L are electrically identical

Features

VDS (V) = 20V

ID = 7.5 A (VGS = 10V)

RDS(ON) < 16mΩ (VGS = 10V)

RDS(ON) < 18mΩ (VGS = 4.5V)

RDS(ON) < 24mΩ (VGS = 2.5V)

RDS(ON) < 34mΩ (VGS = 1.8V)

ESD Rating: 2500V HBM

更新时间:2025-11-27 9:40:00
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AOS
0538+
TSSOP
1359
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8560
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TSSOP
7300
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TSSOP
1359
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AOS/ 万代
24+
TSSOP
17340
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TSSOP-8
50000
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TSSOP-8
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AOS/万代
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TSSOP-8
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TSSOP-8
293
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