General Description

The AO6601 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

Features

N-Ch:

VDS (V)=30V

RDS(ON)< 60mΩ (VGS = 10V)

RDS(ON)< 70mΩ (VGS = 4.5V)

RDS(ON)< 90mΩ (VGS = 2.5V)

ID= 3.4A (VGS=10V)

P-Ch:

VDS (V)=-30V

RDS(ON)< 115mΩ (VGS = -10V)

RDS(ON)< 150mΩ (VGS = -4.5V)

RDS(ON)< 200mΩ (VGS = -2.5V)

ID=-2.3A (VGS=-10V)