Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the

Asymmetric Dual N-Channel MOSFET

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MOSFET：Dual-Channel

Asymmetric Dual N-Channel MOSFET

文件：244.69 Kbytes Page：8 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

Surface Mount High Current Power Inductors

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Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel MOSFET uses advanced trench technology

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