N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to t

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel 20V (D-S) MOSFET

General Features VDS = 30V ID =8.5 A RDS(ON)

N-Channel 20V (D-S) MOSFET

Description The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.5 A RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

文件：116.74 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to th

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

30V N-Channel MOSFET

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Product Summary VDS

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

文件：116.74 Kbytes Page：4 Pages

30V N-Channel MOSFET

文件：566.73 Kbytes Page：6 Pages

30V N-Channel MOSFET

文件：566.73 Kbytes Page：6 Pages

N-Channel MOSFET

文件：1.49152 Mbytes Page：4 Pages

Single Transceiver for MACAIR (A3818, A4905, A5232, A5690), MIL-STD-1553 & SAE-AS15531

GENERAL DESCRIPTION The Aeroflex-Plainview ACT4404N series are a new generation monolithic transceiver which provide full compliance with Macair and MIL-STD-1553 data bus requirements. The model ACT4404N series performs the front-end analog function of inputting and outputting data through a tra

AFE4404 Ultra-Small, Integrated AFE for Wearable, Optical, Heart-Rate Monitoring and Bio-Sensing

1 Features 1• Transmitter: – Supports Common Anode LED Configuration – Dynamic Range: 100 dB – 6-Bit Programmable LED Current to 50 mA (Extendable to 100 mA) – Programmable LED On-Time – Simultaneous Support of 3 LEDs for Optimized SpO2, HRM, or Multi-Wavelength HRM • Receiver: – 24-Bit

Push Rivet-Arrow

文件：70.97 Kbytes Page：1 Pages

Single Transceiver for MACAIR (A3818, A4905, A5232, A5690), MIL-STD-1553 & SAE-AS15531

文件：165.12 Kbytes Page：9 Pages

Ultra-Small, Integrated AFE

文件：1.2488 Mbytes Page：83 Pages