丝印代码：AO4404；N-Channel 20V (D-S) MOSFET

General Features VDS = 30V ID =8.5 A RDS(ON)

丝印代码：AO4404；N-Channel 20V (D-S) MOSFET

Description The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.5 A RDS(ON)

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to t

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

文件：116.74 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the VDS(V) = 30V\nID= 8.5A (VGS= 10V)\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 48mΩ(VGS= 2.5V);

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to th

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

30V N-Channel MOSFET

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Product Summary VDS

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

文件：116.74 Kbytes Page：4 Pages

30V N-Channel MOSFET

文件：566.73 Kbytes Page：6 Pages

30V N-Channel MOSFET

文件：566.73 Kbytes Page：6 Pages

N-Channel MOSFET

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Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages