N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the VDS(V) = 30V\nID= 8.5A (VGS= 10V)\nRDS(ON) < 24mΩ(VGS= 10V)\nRDS(ON)< 30mΩ(VGS= 4.5V)\nRDS(ON)< 48mΩ(VGS= 2.5V);

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages

1.5A DUAL OPEN-DRAIN MOSFET DRIVERS

文件：84.07 Kbytes Page：6 Pages