丝印代码：AD**；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

丝印代码：AD**；20V P-Channel MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -3 A RDS(ON)

Dual Bootstrapped MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3413 is a dual MOSFET driver optimized for driving two N-channel MOSFETs which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 20 ns propagation delay and a 30 ns transition time. On

Dual Bootstrapped MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3413 is a dual MOSFET driver optimized for driving two N-channel MOSFETs which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 20 ns propagation delay and a 30 ns transition time. On

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

3A, 2MHz Monolithic Synchronous Regulator for DDR/QDR Memory Termination

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