包装：散装 描述：BOX ALUM NAT 7.874\ 盒子，外壳，机架 箱

包装：散装 描述：BOX ALUM NAT 7.874\ 盒子，外壳，机架 箱

Dual N-Channel 20-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrica

20V N-Channel MOSFET

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2횞15W Filterless Low EMI Stereo Class D Audio Power Amplifier

文件：438.5 Kbytes Page：9 Pages

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages